KT313G-1 Transistors are silicon, epitaxial-planar structures p-n-p are universal. Designed for use in high-frequency amplifiers and switching devices. KT313G-1: Structure of the transistor: p-n-p and sported max - Permanent Dissipated Collector Power: 300 mW; fgr - Boundary frequency of the transistor current coefficient for a common emitter circuit: at least 200 MHz; UCBO max - Maximum collector-base voltage for a given collector return current and open-circuit emitter: 30 V; Uebo max - The maximum emitter-base voltage for a given reverse current of the emitter and an open collector circuit: 5 V; ISTER max - Maximum permissible constant collector current: 350 mA; ISTER ♘о - Return current of the collector - current through the collector junction with the given collector-base return voltage and the open emitter terminal: no more than 0.5 mkA; h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter: 40 ... 800; Sk - Collector junction capacity: no more than 12 pF Rke us - Resistance of saturation between the collector and the emitter: no more than 3.3 Ohm